Share Email Print
cover

Proceedings Paper

The influence of the substrate temperature variation on FexAl1-x thin films deposition
Author(s): Zhenliang Liu; Zhijun Liao; Shuichang Yang; Weidong Wu; Dengxue Wu; Tiecheng Lu; Lin Zhang; Yongjian Tang
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

FexAl1-x thin films had been prepared on Si (100) substrates by electron beam evaporation. The substrate temperature was varied from room temperature to 450°C at an interval of 100°C. The crystalline orientation of deposited FexAl1-x thin films had been characterized by X-ray diffraction (XRD) and the thickness was measured by Atomic profiler. The results show that the crystalline orientation of FexAl1-x thin films depends on the substrate temperature. The thin films are crystal at different substrate temperatures. The deposition rate becomes bigger from 30°C to 250°C and smaller from 250°C to 450°C. The surface morphology of deposited FexAl1-x thin films had been investigated by atomic force microscopy (AFM). The results show that the surface roughness increases with increasing the substrates temperature to 450°C.

Paper Details

Date Published: 11 March 2008
PDF: 4 pages
Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69842B (11 March 2008); doi: 10.1117/12.792027
Show Author Affiliations
Zhenliang Liu, Sichuan Univ. (China)
Zhijun Liao, Sichuan Univ. (China)
Shuichang Yang, Sichuan Univ. (China)
Weidong Wu, China Academy of Engineering Physics (China)
Dengxue Wu, Sichuan Univ. (China)
Tiecheng Lu, Sichuan Univ. (China)
Lin Zhang, China Academy of Engineering Physics (China)
Yongjian Tang, China Academy of Engineering Physics (China)


Published in SPIE Proceedings Vol. 6984:
Sixth International Conference on Thin Film Physics and Applications

© SPIE. Terms of Use
Back to Top