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Proceedings Paper

Influence of annealing temperature on microstructures and resistivity of FexAl1-x films
Author(s): Shuichang Yang; Zhijun Liao; Zhenliang Liu; Weidong Wu; Dengxue Wu; Tiecheng Lu; Lin Zhang; Yongjian Tang
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Paper Abstract

In this paper, FeXAl1-X films have been deposited on silicon substrates using electron beam evaporation, which have been not reported to prepare FeXAl1-X films before. Subsequently, the films were annealed in vacuum better than 3×10-4Pa for 1 hour at 100°C, 280°C, 330°C, 450°C and 500°C, respectively. Electrical resistivities of the samples were been measured by four point probe, and microstructures of the samples were characterized by X-ray diffraction(XRD). The results show that, the resistivity of films reduces gradually with increasing of the annealing temperature, and the structure of films can be improved after annealing. In addition, the resistivity of film reduces gradually with increasing thickness and comes closed to the that of bulk when the film thickness becomes thicker than 100nm.

Paper Details

Date Published: 11 March 2008
PDF: 4 pages
Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69842A (11 March 2008); doi: 10.1117/12.792025
Show Author Affiliations
Shuichang Yang, Sichuan Univ. (China)
Zhijun Liao, Sichuan Univ. (China)
Zhenliang Liu, Sichuan Univ. (China)
Weidong Wu, China Academy of Engineering Physics (China)
Dengxue Wu, Sichuan Univ. (China)
Tiecheng Lu, Sichuan Univ. (China)
Lin Zhang, China Academy of Engineering Physics (China)
Yongjian Tang, China Academy of Engineering Physics (China)


Published in SPIE Proceedings Vol. 6984:
Sixth International Conference on Thin Film Physics and Applications

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