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Proceedings Paper

The role of ion-assisted deposition in PVD
Author(s): Z. Q. Ma; C. B. Feng; X. Tang; F. Li; B. He; B. B. Shi
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Paper Abstract

An optimal energy interval in ion-assisted deposition of high crystalline films is predicted in the modeling of ion impacting on surface. The result is in good agreement with the presented experiments. The possible application of the evaluation of ion role for the fabrication of potential thin film materials is expected.

Paper Details

Date Published: 11 March 2008
PDF: 4 pages
Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 698420 (11 March 2008); doi: 10.1117/12.792012
Show Author Affiliations
Z. Q. Ma, Shanghai Univ. (China)
C. B. Feng, Shanghai Univ. (China)
X. Tang, Shanghai Univ. (China)
F. Li, Shanghai Univ. (China)
B. He, Shanghai Univ. (China)
B. B. Shi, Shanghai Univ. (China)


Published in SPIE Proceedings Vol. 6984:
Sixth International Conference on Thin Film Physics and Applications

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