Share Email Print

Proceedings Paper

Optical constant of SiOx films in mid-IR range prepared by ion-assisted deposition
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

SiOx(x~1) films were prepared by the ion-assisted deposition (IAD) process. The films were evaporated from silicon monoxide with and without simultaneous Ar+ bombardment. As analyzed by using X-ray diffraction and transmission electron microscopy measurements, the films showed amorphous structures. The stoichiometry of each film was determined by using both infrared spectrometry and X-ray photoelectron spectrometry. The results revealed that the oxygen content of the SiOx thin films was slightly varied under the different conditions of Ar+ bombardment. The optical constants of the SiOx thin films in the mid-infrared range were measured using an infrared variable angle spectroscopic ellipsometer. The variation of these refracting indices was mainly related to the packing density. The results presented in this work showed the possibilities of controlling the stoichiometry and the refracting index of the SiOx thin film by the application of IAD process.

Paper Details

Date Published: 29 August 2008
PDF: 8 pages
Proc. SPIE 7067, Advances in Thin-Film Coatings for Optical Applications V, 70670G (29 August 2008); doi: 10.1117/12.792002
Show Author Affiliations
Shih-Liang Ku, National Central Univ. (Taiwan)
Cheng-Chung Lee, National Central Univ. (Taiwan)

Published in SPIE Proceedings Vol. 7067:
Advances in Thin-Film Coatings for Optical Applications V
Jennifer D. T. Kruschwitz; Michael J. Ellison, Editor(s)

© SPIE. Terms of Use
Back to Top