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Proceedings Paper

Growth and characterization of short-period InAs/GaSb superlattice photoconductors
Author(s): Jie Guo; Weigo Sun; Yingqiang Xu; Zhiqiang Zhou; Zhichuan Niu
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Paper Abstract

The short- and mid-wavelength infrared detectors based on short period type II superlattices (SLs) InAs (2ML) / GaSb (8ML) and InAs (8ML) / GaSb (8ML) were grown by molecular-beam epitaxy on semi-insulating GaAs substrates. An interfacial misfit mode AlSb quantum dot layer and a thick GaSb layer were grown as buffer layers. Room-temperature optical transmittance spectra showed clear absorption edge at ~2μm and ~5μm. The 50% cutoff wavelength of the two photoconductors was 2.1μm and 5.05μm in photoresponse at 77K respectively. The blackbody detectivity was beyond 2×108 cmHz1/2/W at 77K and 1×108 cmHz1/2/W at room temperature with 8 V/cm bias.

Paper Details

Date Published: 3 September 2008
PDF: 9 pages
Proc. SPIE 7055, Infrared Systems and Photoelectronic Technology III, 70550U (3 September 2008); doi: 10.1117/12.791978
Show Author Affiliations
Jie Guo, NorthWest Polytechnical Univ. (China)
Luoyang Opti-electronics Development Ctr. (China)
Weigo Sun, NorthWest Polytechnical Univ. (China)
Luoyang Opti-electronics Development Ctr. (China)
Yingqiang Xu, Institute of Semiconductors (China)
Zhiqiang Zhou, Institute of Semiconductors (China)
Zhichuan Niu, Institute of Semiconductors (China)

Published in SPIE Proceedings Vol. 7055:
Infrared Systems and Photoelectronic Technology III
Eustace L. Dereniak; John P. Hartke; Paul D. LeVan; Randolph E. Longshore; Ashok K. Sood, Editor(s)

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