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Proceedings Paper

Influence of the size dispersion on the emission spectra of the hydrogen passivated Si nanoparticles in SiNx
Author(s): Wenge Ding; Zhongxiu Hao; Wei Yu; Jiangyong Zhang; Yachao Li; Guangsheng Fu
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Paper Abstract

The influence of the size dispersion on the emission spectra of the hydrogen passivated silicon nanopaticles (Si NPs) in silicon nitride thin films, which are grown by helicon wave plasma-enhanced chemical vapor deposition (HWP-CVD) technique with SiH4, H2 and Ar-diluted 6.25% N2 as the reactant gas sources, have been investigated. Transmission electron microscopy examination shows that Si NPs are isolated from the others by silicon nitride barriers and the sizes of Si NPs in silicon nitride matrix are distributed within a wide range. The luminescent due to quantum confinement effect of Si NPs embedded in the SiNx matrix was guaranteed by adding H2 into film deposition process. The emission correlated to the defects such as excess silicon voids and nonradiative recombination centers have been suppressed and a strong PL with a wide band was observed. The photoluminescence (PL) spectra were investigated under different excitation energy (Eex). It is shown that both the PL peak energy and their full width at half maximum (FWHM) show a decrease trend with decreasing the Eex, and no obvious PL can be observed when the Eex lower than a certain Eex. And at high excitation energy contribution of the smaller particles in size becomes remarkable larger, thus it may be extremely difficult to correlate the PL spectra with the mean size of the Si NPs. These results are explained by quantum confinement effect model taking into account there existing a size distribution of Si NPs in the SiNx matrix.

Paper Details

Date Published: 12 March 2008
PDF: 7 pages
Proc. SPIE 6624, International Symposium on Photoelectronic Detection and Imaging 2007: Optoelectronic System Design, Manufacturing, and Testing, 662425 (12 March 2008); doi: 10.1117/12.791216
Show Author Affiliations
Wenge Ding, Hebei Univ. (China)
Zhongxiu Hao, Hebei Univ. (China)
Wei Yu, Hebei Univ. (China)
Jiangyong Zhang, Hebei Univ. (China)
Yachao Li, Hebei Univ. (China)
Guangsheng Fu, Hebei Univ. (China)


Published in SPIE Proceedings Vol. 6624:
International Symposium on Photoelectronic Detection and Imaging 2007: Optoelectronic System Design, Manufacturing, and Testing

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