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Proceedings Paper

The effects of process parameters on the properties of ITO films grown by ion beam-assisted deposition using 90In-10Sn (wt%) alloy
Author(s): Zhinong Yu; Longfeng Xiang; We Xue; Huaqing Wang; Weiqiang Lu
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Paper Abstract

ITO films have been grown by ion beam-assisted deposition (IBAD) using 90In-10Sn (wt%) alloy. The electrical and optical properties of these films have been investigated as a function of oxygen flux, evaporation rate, ion energy and substrate temperature during deposition. The films with resistivity as low as cm Ω 2.4 × 10-3 Ω • cm (at room temperature) and 8 × 10-4 Ω • cm (at 150°C) have been deposited, and the transmittance of all samples in the visible range is above 82%. The deposited films at room temperature are polycrystalline with a preferred orientation of (222) and the size of crystal particle is about 21nm, and the surface roughness for the ITO films grown at room temperature is Ra=5.32nm.

Paper Details

Date Published: 12 March 2008
PDF: 7 pages
Proc. SPIE 6624, International Symposium on Photoelectronic Detection and Imaging 2007: Optoelectronic System Design, Manufacturing, and Testing, 66241P (12 March 2008); doi: 10.1117/12.791176
Show Author Affiliations
Zhinong Yu, Beijing Institute of Technology (China)
Longfeng Xiang, Beijing Institute of Technology (China)
We Xue, Beijing Institute of Technology (China)
Huaqing Wang, Beijing Institute of Technology (China)
Weiqiang Lu, Beijing Institute of Technology (China)


Published in SPIE Proceedings Vol. 6624:
International Symposium on Photoelectronic Detection and Imaging 2007: Optoelectronic System Design, Manufacturing, and Testing

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