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Proceedings Paper

Optical dominated high power sub-nanosecond pulse system
Author(s): Wei Shi; Zheng Liu; Xue Liao
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Paper Abstract

High power sub-nanosecond electrical pulse system based on photoconductive semiconductor switch (PCSS) is reported. To get high power sub-nanosecond electrical pulse, experiments of three kinds of switches such as a lateral semi-insulating GaAs PCSS, gas gap added into the two electrodes of the switch on the GaAs chip and combinatorial switchs of GaAs PCSS with gas switch are triggered by nano-second laser pulse. The source of the triggered laser is YAG lasers, and the width of the laser is about 3.5 ns. A maximum current is only 38A by a single 3.5mm PCSS. The combinatorial switch of a 3mm-gap PCSS and a 0.6~0.8mm gas switch is triggered at the biased voltage 4000V, a high current pulse is acquired with the peak value above 5160A, and ns risetime. The voltage transmission efficiency is more than 100% (129%), which can not be answered for the ohm-theorem. This phenomena is explained with the theorem of plasma.

Paper Details

Date Published: 3 March 2008
PDF: 7 pages
Proc. SPIE 6621, International Symposium on Photoelectronic Detection and Imaging 2007: Photoelectronic Imaging and Detection, 66211W (3 March 2008); doi: 10.1117/12.790941
Show Author Affiliations
Wei Shi, Xi'an Univ. of Technology (China)
Zheng Liu, Xi'an Univ. of Technology (China)
Xue Liao, Xi'an Univ. of Technology (China)


Published in SPIE Proceedings Vol. 6621:
International Symposium on Photoelectronic Detection and Imaging 2007: Photoelectronic Imaging and Detection

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