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Proceedings Paper

Effects of impurities with deep energy level in high biased field on delay time of semi-insulating GaAs photoconductive switches
Author(s): Huiying Dai; Wei Shi; Junyan Hou
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Paper Abstract

This paper discussed the SI-GaAs photoconductive switch entering into the nonlinear mode under the high biased field and the result of photovoltaic delay, as well as, analyzed the phenomena of electric pulses delay under the high biased field. Meanwhile, pose a theory that the captive effects of impurities in deep energy level of semi-conductor materials is the main reason of photovoltaic delay, moreover, calculation to account the relationship between the transmission of charge domain and photovoltaic delay, and received a result that inosculate with the experiment.

Paper Details

Date Published: 3 March 2008
PDF: 6 pages
Proc. SPIE 6621, International Symposium on Photoelectronic Detection and Imaging 2007: Photoelectronic Imaging and Detection, 66211Q (3 March 2008); doi: 10.1117/12.790934
Show Author Affiliations
Huiying Dai, Xi'an Univ. of Technology (China)
Air Force Engineering Univ. (China)
Wei Shi, Xi'an Univ. of Technology (China)
Junyan Hou, Ordnance Engineering College (China)


Published in SPIE Proceedings Vol. 6621:
International Symposium on Photoelectronic Detection and Imaging 2007: Photoelectronic Imaging and Detection

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