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Proceedings Paper

Inductively coupled plasma etching of AlGaN using Cl2/Ar/BCl3 gases
Author(s): Liang Chen; Yimin Huang; Jun Chen; Yan Sun; Tianxin Li; De-gang Zhao; Haimei Gong
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Paper Abstract

AlGaN is am important ultraviolet optoelectronic material and inductively coupled plasma (ICP) etching plays an important role in fabrication of mesa structures of AlGaN-based photodiodes. In this work, we investigate ICP etching processes of Al0.32Ga0.68N and Al0.47Ga0.53N. The Al0.32Ga0.68N and Al0.47Ga0.53N materials were firstly tested by transmission spectra and it indicates that they are different materials with different epitaxial quality. Cl2/Ar/BCl3 were used as the ICP gases, and Cl2/Ar mixing ratio was fixed at 4:1. Etching behaviors were characterized by varying the ICP power, the dc bias, Cl2/Ar/BCl3 mixing ratio. ICP power influences etching rates. Dc bias heavily influences the etching rates, and the etching rates increase monotonously with dc bias, which suggests that the ion-bombardment effect is an important factor of these etching processes. BCl3 is the effective removal of oxygen during the etching, and also influences etching rates. The surface rms roughness was measured by an at omic force microscope. The ICP etching surface morphologies were studied by Scanning Electron Microscope (SEM). The results show dc bias and BCl3 are important to electrical characteristics of epitaxial materials. At a relative high dc bias and more BCl3, the etching rate is low, but the damage is low. These results have direct application to the fabrication of AlGaN-based ultraviolet optoelectronic devices.

Paper Details

Date Published: 3 March 2008
PDF: 7 pages
Proc. SPIE 6621, International Symposium on Photoelectronic Detection and Imaging 2007: Photoelectronic Imaging and Detection, 66211A (3 March 2008); doi: 10.1117/12.790829
Show Author Affiliations
Liang Chen, Shanghai Institute of Technical Physics (China)
Yimin Huang, Shanghai Institute of Technical Physics (China)
Jun Chen, Shanghai Institute of Technical Physics (China)
Yan Sun, Shanghai Institute of Technical Physics (China)
Tianxin Li, Shanghai Institute of Technical Physics (China)
De-gang Zhao, Institute of Semiconductors (China)
Haimei Gong, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 6621:
International Symposium on Photoelectronic Detection and Imaging 2007: Photoelectronic Imaging and Detection

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