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Proceedings Paper

Improved Au/Zn/Au ohmic contacts for p-type InP
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Paper Abstract

In this work, an innovated Si3N4 as an out-diffusion barrier layer to Au/Zn/Au contact system for p-type InP has been proposed. Before the contacts were annealed, Si3N4 layer was deposited on the Au(200Å)/Zn(700Å)/Au(200Å), then the Si3N4 was removed by HF and a 2000A layer of pure gold was deposited to facilitate wire bonding. The specific contact resistance dropped to a minimum value of 6×10-7 Ω • cm2 (for an acceptor concentration of about 3×1018 cm-3) and the contact became perfectly Ohmic. Besides, Si3N4 layer is an excellent passivation layer and antireflection coating in InP/InGaAs/InP (p-i-n) photodiodes.

Paper Details

Date Published: 4 March 2008
PDF: 7 pages
Proc. SPIE 6621, International Symposium on Photoelectronic Detection and Imaging 2007: Photoelectronic Imaging and Detection, 662118 (4 March 2008); doi: 10.1117/12.790778
Show Author Affiliations
Kefeng Zhang, Shanghai Institute of Technical Physics (China)
Graduate School of the Chinese Academy of Sciences (China)
Hengjing Tang, Shanghai Institute of Technical Physics (China)
Graduate School of the Chinese Academy of Sciences (China)
Xiaoli Wu, Shanghai Institute of Technical Physics (China)
Graduate School of the Chinese Academy of Sciences (China)
Jintong Xu, Shanghai Institute of Technical Physics (China)
Graduate School of the Chinese Academy of Sciences (China)
Xue Li, Shanghai Institute of Technical Physics (China)
Haimei Gong, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 6621:
International Symposium on Photoelectronic Detection and Imaging 2007: Photoelectronic Imaging and Detection

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