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Proceedings Paper

Characteristics of ZnMgO-based metal-semiconductor-metal photodetectors
Author(s): Kewei Liu; Dezhen Shen; Jiying Zhang; Youming Lu; Dayong Jiang; Yanmin Zhao; Binghui Li; Dongxu Zhao; Zhenzhong Zhang; Bin Yao
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Paper Abstract

In recent years, ZnMgO semiconductor alloys, with a direct bandgap tunable between 3.37 eV and 7.8 eV, become one of the most suitable materials for the fabrication of ultraviolet detectors. In this paper, we have fabricated metal-semiconductor-metal photodetectors on 1-μm thick Zn0.8Mg0.2O films. The interdigital metal electrodes are 500 μm long and 5 μm wide with an interelectrode spacing 2 μm, 5 μm and 10 μm, respectively. Zn0.8Mg0.2O films were grown on quartz by ratio frequency magnetron sputtering at 500°C. Dark current, spectral responsivity and pulse response were carried out for the devices with different finger pitches. All the photodetectors showed the peak responsivity at 330 nm and the ultraviolet-visible rejection ratio (R330 nm/R400 nm) is more than four orders of magnitude at 3 V bias. For the device with 2 μm finger pitch, the detectivity was calculated as 4.2×1011 cm Hz1/2/W at 330 nm. Furthermore, the transient response measurement for all devices revealed similar rise time of 10 ns. The 90%-10% fall times are 130 ns, 170 ns and 230 ns for the devices with different finger pitches of 2 μm, 5 μm and 10 μm, respectively.

Paper Details

Date Published: 3 March 2008
PDF: 8 pages
Proc. SPIE 6621, International Symposium on Photoelectronic Detection and Imaging 2007: Photoelectronic Imaging and Detection, 662116 (3 March 2008); doi: 10.1117/12.790770
Show Author Affiliations
Kewei Liu, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Graduate School of the Chinese Academy of Sciences (China)
Dezhen Shen, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Jiying Zhang, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Youming Lu, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Dayong Jiang, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Graduate School of the Chinese Academy of Sciences (China)
Yanmin Zhao, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Graduate School of the Chinese Academy of Sciences (China)
Binghui Li, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Dongxu Zhao, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Zhenzhong Zhang, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Bin Yao, Changchun Institute of Optics, Fine Mechanics and Physics (China)


Published in SPIE Proceedings Vol. 6621:
International Symposium on Photoelectronic Detection and Imaging 2007: Photoelectronic Imaging and Detection

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