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Proceedings Paper

Diffusion dark current in CCDs and CMOS image sensors
Author(s): M. M. Blouke
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Paper Abstract

Long neglected as unimportant, the dark current that arises due to diffusion from the bulk is assuming a more important role now that CCD and CMOS imagers are finding their way into consumer electronics which must be capable of operating at elevated temperatures. Historically this component has been estimated from the diffusion related current of a diode with an infinite substrate. This paper explores the effect of a substrate of finite extent beneath the collecting volume of the pixel for both a front-illuminated device and a thinned back-illuminated device and develops corrected expressions for the diffusion related dark current. The models show that the diffusion dark current can be much less than that predicted by the standard model

Paper Details

Date Published: 29 February 2008
PDF: 15 pages
Proc. SPIE 6816, Sensors, Cameras, and Systems for Industrial/Scientific Applications IX, 68160I (29 February 2008); doi: 10.1117/12.787729
Show Author Affiliations
M. M. Blouke, Ball Aerospace & Technologies Corp. (United States)


Published in SPIE Proceedings Vol. 6816:
Sensors, Cameras, and Systems for Industrial/Scientific Applications IX
Morley M. Blouke; Erik Bodegom, Editor(s)

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