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Proceedings Paper

Laser-induced plume expansion from a silicon wafer in a wide range of ambient gas pressure
Author(s): Alexey N. Volkov; German A. Lukianov; Gerard M. O'Connor
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Paper Abstract

Expansion of the laser plume into surrounding gas is considered in the range of ambient gas pressure from 0.1 bar to 1 bar using a kinetic approach. Plume is generated by a nanosecond laser pulse irradiating a silicon wafer. Absorption of laser radiation by the silicon wafer, its heating and melting are described by a two-dimensional thermal model. Axisymmetric flow in the laser plume is calculated by the Direct Simulation Monte Carlo method. Collisions between molecules are described by the hard spheres - Larsen-Borgnakke model. Ablation rate is found from the Hertz-Knudsen equation with taking into account of the back flux of atoms re-deposited at the surface from the plume. The purpose of the work is to study the influence of surrounding gas pressure and its chemical composition on the flow patterns and mixture process in the ablation plume and deposition of the ablated material back to the irradiated surface.

Paper Details

Date Published: 15 January 2008
PDF: 12 pages
Proc. SPIE 6985, Fundamentals of Laser Assisted Micro- and Nanotechnologies, 69850P (15 January 2008); doi: 10.1117/12.787119
Show Author Affiliations
Alexey N. Volkov, National Univ. of Ireland, Galway (Ireland)
German A. Lukianov, St. Petersburg Polytechnical Univ. (Russia)
Gerard M. O'Connor, National Univ. of Ireland, Galway (Ireland)


Published in SPIE Proceedings Vol. 6985:
Fundamentals of Laser Assisted Micro- and Nanotechnologies

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