Share Email Print
cover

Proceedings Paper

Deposition of films and layers for sensors with PLD and LIFT method
Author(s): S. A. Mulenko; Y. V. Kudryavtsev; N. T. Gorbachuk; A. Luches; A. P. Caricato; V. P. Veiko; V. A. Chuiko; A. A. Petrov
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Two methods were used for the deposition of thin films and layers: pulsed laser deposition (PLD) and laser-induced film transfer (LIFT). The first one was based on using KrF laser radiation. Thin films and layers were deposited by KrF laser ablation of CrSi2 and β-FeSi2 targets with the aim to obtain silicide layers with narrow band gap for sensor applications. The CrSi2-based films display both semiconductor and metal properties, depending on the deposition parameters. Thus, the film d ≅ 40 nm thick, deposited on Si at 740 K, presents a band gap Eg ≅ 0.18 eV, a thermo e.m.f. coefficient α ≅ 1.0-1.4 mV/K for 300≤T≤340 K and a coefficient of tensosensitivity (R-R0)/R) ≅ 5. The film with the same thickness, but deposited on SiO2 at 740 K, presents a metal behavior in the range 125≤T≤296 K and a semiconductor one for 77≤T≤125 K. Its α coefficient changes in the range 5.0 - 7.5 μV/K for 300≤T≤340 K. The 750 nm thick film deposited on SiO2 at 740 K displays only semiconductor behavior in the range 296-77 K with Eg ≅ 0.013 eV and α ≅ 10-15 μV/K for 293≤T≤340 K. The coefficient of tensosensitivity for these films is changing in the range 2-5. The β-FeSi2-based films deposited on SiO2 at 295≤T≤740 K show only semiconductor behavior. The thicker the film, the higher Eg: d ≅ 150 nm, Eg ≅ 0.032 eV; d ≅ 70 nm, Eg ≅ 0.027 eV; d ≅ 60 nm, Eg ≅ 0.023 eV. The thermo e.m.f coefficient α ≅ 10 μV/K for the 150 nm thick film and α 8 μV/K for the 60 nm thick film at 293≤T≤340 K. The coefficient of tensosensitivity for these films varies in the range 2.3-4.7. The second one was based on LIFT of CrSi2 and β-FeSi2 targets, using a Q-switched Nd: YAG laser. The α coefficient for the deposited layer from β-FeSi2 is about 2.2 μV/K with Eg ≅ 0.05 eV. While decreasing the average power density of the Q-switched Nd: YAG laser, the band gap decreases down to 0.005 eV. For this film we found α ≅ 2.0 μV/K. The α coefficient for the deposited layer from CrSi2 is about 36 μV/K with Eg ≅ 0.09 eV. Coefficient of thermo e.m.f. for layers obtained by LIFT method was measured at 300≤T≤350 K. The coefficient of tensosensitivity for layers obtained by LIFT varied in the range 1.5-4.2. The higher the semiconductor phase content in the deposited films and layers obtained by PLD and LIFT methods, the higher are the values of α and (R-R0)/R0ε.

Paper Details

Date Published: 15 January 2008
PDF: 8 pages
Proc. SPIE 6985, Fundamentals of Laser Assisted Micro- and Nanotechnologies, 69850J (15 January 2008); doi: 10.1117/12.786988
Show Author Affiliations
S. A. Mulenko, Institute for Metal Physics (Ukraine)
Y. V. Kudryavtsev, Institute for Metal Physics (Ukraine)
N. T. Gorbachuk, Institute for Metal Physics (Ukraine)
A. Luches, Univ. of Salento (Italy)
A. P. Caricato, Univ. of Salento (Italy)
V. P. Veiko, St. Petersburg State Univ. of Information Technologies, Mechanics and Optics (Russia)
V. A. Chuiko, St. Petersburg State Univ. of Information Technologies, Mechanics and Optics (Russia)
A. A. Petrov, St. Petersburg State Univ. of Information Technologies, Mechanics and Optics (Russia)


Published in SPIE Proceedings Vol. 6985:
Fundamentals of Laser Assisted Micro- and Nanotechnologies

© SPIE. Terms of Use
Back to Top