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Proceedings Paper

Electro-tuning of the photonic band gap in SOI-based structures infiltrated with liquid crystal
Author(s): V. A. Tolmachev; S. A. Grudinkin; J. A. Zharova; V. A. Melnikov; E. V. Astrova; T. S. Perova
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Paper Abstract

One dimensional periodic and non-periodic silicon photonic structures have been designed and fabricated on silicon-on-insulator substrate for the investigation of the electro-tuning effect in composite system Photonic Crystal - Liquid Crystal. The reflection spectra registered for non-periodic structures demonstrate the phase polarisation shift for bands of high reflection, while for the periodic structure the shift of the photonic band gap edge was observed. Under an applied electric field in the range from 2V to 10V, the shift of the polarised reflection spectra, caused by reorientation of the LC director from planar to homeotropic alignment, has been obtained. A significant change in the refractive index close to Δn=0.2, which is a characteristic feature for LC E7, has been achieved due to LC reorientation in all structures just after LC infiltration. It was found that after switching-off the applied electric field the initial planar orientation of LC molecules is not restored. This effect is related to weak anchoring of LC molecules to the silicon side-walls which results in the transition of LC to the pseudo-isotropic alignment after the applied voltage is off. A relatively smaller (with Δn=0.07), but highly reproducible electro-tuning effect was revealed during the LC reorientation from pseudo-isotropic to homeotropic alignment. The shift of the edge of PBG by Δλ=0.16 or by Δλ/λ=1.6% in relative shift units was observed in this case. The response time estimated under applied square shaped ac pulses of various frequencies was found to be around 30 ms.

Paper Details

Date Published: 1 May 2008
PDF: 9 pages
Proc. SPIE 6996, Silicon Photonics and Photonic Integrated Circuits, 69961Z (1 May 2008); doi: 10.1117/12.786839
Show Author Affiliations
V. A. Tolmachev, Trinity College (Ireland)
Ioffe Physico-Technical Institute (Russia)
S. A. Grudinkin, Trinity College (Ireland)
Ioffe Physico-Technical Institute (Russia)
J. A. Zharova, Ioffe Physico-Technical Institute (Russia)
V. A. Melnikov, Trinity College (Ireland)
E. V. Astrova, Ioffe Physico-Technical Institute (Russia)
T. S. Perova, Trinity College (Ireland)


Published in SPIE Proceedings Vol. 6996:
Silicon Photonics and Photonic Integrated Circuits
Giancarlo C. Righini; Seppo K. Honkanen; Lorenzo Pavesi; Laurent Vivien, Editor(s)

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