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Proceedings Paper

P-type ZnO thin films via phosphorus doping
Author(s): D. P. Norton; H. S. Kim; J. M Erie; S. J. Pearton; Y. L. Wang; F. Ren
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Paper Abstract

ZnO is a wide bandgap semiconductor that exhibits properties that are near-ideal for light-emitting diodes, but presents materials challenges that must be overcome in order to achieve highly efficient light emission. The most significant issue with ZnO is p-type doping. Related materials issues include understanding electron-hole transport across pn junctions, as well as understanding and minimizing leakage current paths within the bulk and on the surface. In this paper, the formation and properties of phosphorus-doped Zn1-xMgxO films, ZnO-based pn homojunctions and heterojunctions is discussed. The behavior of phosphorus within the ZnO and ZnMgO matrices will be described. Comparisons with other acceptor dopants will be made. Discussion will include stability of transport properties, stabilization of surfaces, and device characteristics.

Paper Details

Date Published: 15 February 2008
PDF: 8 pages
Proc. SPIE 6895, Zinc Oxide Materials and Devices III, 68950W (15 February 2008); doi: 10.1117/12.785467
Show Author Affiliations
D. P. Norton, Univ. of Florida (United States)
H. S. Kim, Univ. of Florida (United States)
J. M Erie, Univ. of Florida (United States)
S. J. Pearton, Univ. of Florida (United States)
Y. L. Wang, Univ. of Florida (United States)
F. Ren, Univ. of Florida (United States)


Published in SPIE Proceedings Vol. 6895:
Zinc Oxide Materials and Devices III
Ferechteh Hosseini Teherani; Cole W. Litton, Editor(s)

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