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Proceedings Paper

Subpicosecond dielectric breakdown and incubation in TixSi1-xO2 composite films with adjustable bandgap
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Paper Abstract

Laser induced breakdown of single-layer, ion-beam sputtered TixSi1-xO2 composite films was studied using single and multiple pulses from a femtosecond Ti:sapphire laser. The bandgap of this coating material can be gradually adjusted with the composition parameter x. A scaling law with respect to the bandgap energy and pulse duration dependence of the single-pulse damage threshold that was observed previously for pure oxide films was found to apply to the composite films as well. The dependence of the damage threshold as a function of pulse number F(N) was similar to the behavior observed for pure oxide films. It was possible to explain the dependence as a function of pulse number using a theoretical model based on the formation and accumulation of defects. The shape of F(N) can be used to estimate the role of shallow traps and deep traps on the multiple-pulse breakdown behavior.

Paper Details

Date Published: 14 May 2008
PDF: 10 pages
Proc. SPIE 7005, High-Power Laser Ablation VII, 70051V (14 May 2008); doi: 10.1117/12.785154
Show Author Affiliations
L. A. Emmert, Univ. of New Mexico (United States)
D. Nguyen, Univ. of New Mexico (United States)
I. Cravetchi, Univ. of New Mexico (United States)
M. Mero, Univ. of New Mexico (United States)
W. Rudolph, Univ. of New Mexico (United States)
M. Jupe, Laser Zentrum Hannover e.V. (Germany)
M. Lappschies, Laser Zentrum Hannover e.V. (Germany)
K. Starke, Laser Zentrum Hannover e.V. (Germany)
D. Ristau, Laser Zentrum Hannover e.V. (Germany)

Published in SPIE Proceedings Vol. 7005:
High-Power Laser Ablation VII
Claude R. Phipps, Editor(s)

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