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Proceedings Paper

Silicon wafers for scanning helium microscopy
Author(s): D. Litwin; J. Galas; S. Sitarek
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Paper Abstract

The Scanning Helium Microscopy is a new technique currently under development. The paper is an overview of measurements of the geometrical characteristics of Silicon wafer concentrating on accuracy and closely related matters. In the microscope the helium atom beam is used as a probe. The overall microscope resolution depends on a deflecting element, which shapes the beam and focuses it onto a sample's surface. The most promising focusing component appears to be an ultra thin silicon wafer that is deformed under a precise electric field. Flatness and thickness uniformity of the wafer must be measured in order to select the best plate to be used in the microscope. A scanning measurement system consists of two coaxially positioned confocal heads. The paper discusses measures taken to overcome the system sensitivity to temperature variation and concludes with utilizing symmetry descriptors for final selection of wafers.

Paper Details

Date Published: 28 December 2007
PDF: 8 pages
Proc. SPIE 6937, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2007, 693740 (28 December 2007); doi: 10.1117/12.784913
Show Author Affiliations
D. Litwin, Institute of Applied Optics (Poland)
J. Galas, Institute of Applied Optics (Poland)
S. Sitarek, Institute of Applied Optics (Poland)


Published in SPIE Proceedings Vol. 6937:
Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2007

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