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Proceedings Paper

Efficient defect structure analysis in semi-insulating materials by support vector machine and relevance vector machine
Author(s): Stanisław Jankowski; Janusz Będkowski; Przemysław Danilewicz; Zbigniew Szymański
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Paper Abstract

We propose new approach for defect centers parameters extraction in semi-insulating GaAs. The experimental data is obtained by high-resolution photoinduced transient spectroscopy (HR-PITS). Two algorithms have been introduced: support vector machine - sequential minimal optimization (SVM-SMO) and relevance vector machine (RVM). Those methods perform the approximation of the Laplace surface. The advantages of proposed methods are: good accuracy of approximation, low complexity, excellent generalization. We developed SVM-RVM-PITS system, which enables graphical representation of Laplace surface, defining local area for defect parameter extraction, choosing the SVM or RVM method for approximation, calculation of the Arrhenius line factors and finally the parameters of the defect centers.

Paper Details

Date Published: 28 December 2007
PDF: 9 pages
Proc. SPIE 6937, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2007, 69371U (28 December 2007); doi: 10.1117/12.784706
Show Author Affiliations
Stanisław Jankowski, Warsaw Univ. of Technology (Poland)
Janusz Będkowski, Warsaw Univ. of Technology (Poland)
Przemysław Danilewicz, Warsaw Univ. of Technology (Poland)
Zbigniew Szymański, Warsaw Univ. of Technology (Poland)


Published in SPIE Proceedings Vol. 6937:
Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2007

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