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Proceedings Paper

Amorphous silicon-based large-format uncooled FPA microbolometer technology
Author(s): T. Schimert; J. Brady; T. Fagan; M. Taylor; W. McCardel; R. Gooch; S. Ajmera; C. Hanson; A. J. Syllaios
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Paper Abstract

This paper presents recent developments in next generation microbolometer Focal Plane Array (FPA) technology at L-3 Communications Infrared Products (L-3 CIP). Infrared detector technology at L-3 CIP is based on hydrogenated amorphous silicon (a-Si:H) and amorphous silicon germanium(a-SiGe:H). Large format high performance, fast, and compact IR FPAs are enabled by a low thermal mass pixel design; favorable material properties; an advanced ROIC design; and wafer level packaging. Currently at L-3 CIP, 17 micron pixel FPA array technology including 320x240, 640 x 480 and 1024 x768 arrays is under development. Applications of these FPAs range from low power microsensors to high resolution near-megapixel imager systems.

Paper Details

Date Published: 17 April 2008
PDF: 7 pages
Proc. SPIE 6940, Infrared Technology and Applications XXXIV, 694023 (17 April 2008); doi: 10.1117/12.784661
Show Author Affiliations
T. Schimert, L-3 Communications Infrared Products (United States)
J. Brady, L-3 Communications Infrared Products (United States)
T. Fagan, L-3 Communications Infrared Products (United States)
M. Taylor, L-3 Communications Infrared Products (United States)
W. McCardel, L-3 Communications Infrared Products (United States)
R. Gooch, L-3 Communications Infrared Products (United States)
S. Ajmera, L-3 Communications Infrared Products (United States)
C. Hanson, L-3 Communications Infrared Products (United States)
A. J. Syllaios, L-3 Communications Infrared Products (United States)


Published in SPIE Proceedings Vol. 6940:
Infrared Technology and Applications XXXIV
Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Editor(s)

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