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Proceedings Paper

ZnO nanostructures for optoelectronic applications
Author(s): Ashok K. Sood; Yash R. Puri; Wenjie Mai; Puxian Gao; Changshi Lao; Zhong L. Wang; Dennis L. Polla; Martin B. Soprano
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Paper Abstract

In this Paper we present growth and characterization of ZnO nanowires on wideband gap substrates, such as SiC and GaN. Experimental results on the ZnO nanowires grown on p-SiC and p-GaN are presented with growth morphology, structure analysis, and dimensionality control. We also present experimental results on individual nanowires such as I-V measurements and UV sensitivity measurements with use of polymer coating on ZnO nanowires. The ZnO nanowires can be used for a variety of nanoscale optical and electronics applications.

Paper Details

Date Published: 30 April 2008
PDF: 8 pages
Proc. SPIE 6959, Micro (MEMS) and Nanotechnologies for Space, Defense, and Security II, 69591A (30 April 2008); doi: 10.1117/12.784458
Show Author Affiliations
Ashok K. Sood, Magnolia Optical Technologies, Inc. (United States)
Yash R. Puri, Magnolia Optical Technologies, Inc. (United States)
Wenjie Mai, Georgia Institute of Technology (United States)
Puxian Gao, Georgia Institute of Technology (United States)
Changshi Lao, Georgia Institute of Technology (United States)
Zhong L. Wang, Georgia Institute of Technology (United States)
Dennis L. Polla, DARPA/MTO (United States)
Martin B. Soprano, DARPA Programs Office, U.S. Army (United States)


Published in SPIE Proceedings Vol. 6959:
Micro (MEMS) and Nanotechnologies for Space, Defense, and Security II
Thomas George; Zhongyang Cheng, Editor(s)

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