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Proceedings Paper

High-power one-, two-, and three-dimensional photonic crystal edge-emitting laser diodes for ultra-high brightness applications
Author(s): N. Yu. Gordeev; M. V. Maximov; Y. M. Shernyakov; I. I. Novikov; L. Ya. Karachinsky; V. A. Shchukin; T. Kettler; K. Posilovic; N. N. Ledentsov; D. Bimberg; R. Duboc; A. Sharon; D. B. Arbiv; U. Ben-Ami
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Paper Abstract

Direct laser diodes can typically provide only a limited single mode power, while ultrahigh-brightness is required for many of the market-relevant applications. Thus, multistage power conversion schemes are applied, when the laser diodes are used just as a pumping source. In this paper we review the recent advances in ultra-large output aperture edge-emitting lasers based on the photonic band crystal (PBC) concept. The concept allows near- and far-field engineering robust to temperature and strain gradients and growth nonuniformities. High-order modes are selectively filtered and the effective optical confinement of the fundamental mode can be dramatically enhanced. At first, we show that robust ultra-narrow vertical beam divergence (<5 deg. FWHM) can be achieved simultaneously with ultrahigh differential efficiency (80-85%) and significant single mode power for several wavelengths of the key regions. A maximum single mode power of 1.4 W is achieved for 980 nm lasers. At second we extend the PBC concept towards the 2D photonic crystal. A significant field extension in the vertical direction allows a robust fabrication of the field-coupled lateral multistripe PBC arrays with a total multistripe width of 0.2 mm. We also demonstrate that the concept of high-order modes filtering works well also in the lateral direction. Finally, we address possible options for 3D managing of light towards wavelength stabilized laser operation by processing of the multistripe arrays along their lengths. The concept opens a way for 3D photonic crystal edge emitting lasers potentially allowing scalable single mode power increase to arbitrary high levels.

Paper Details

Date Published: 22 February 2008
PDF: 15 pages
Proc. SPIE 6889, Physics and Simulation of Optoelectronic Devices XVI, 68890W (22 February 2008); doi: 10.1117/12.784402
Show Author Affiliations
N. Yu. Gordeev, Abraham Ioffe Physico-Technical Institute (Russia)
M. V. Maximov, Abraham Ioffe Physico-Technical Institute (Russia)
Y. M. Shernyakov, Abraham Ioffe Physico-Technical Institute (Russia)
I. I. Novikov, Abraham Ioffe Physico-Technical Institute (Russia)
L. Ya. Karachinsky, Abraham Ioffe Physico-Technical Institute (Russia)
Technische Univ. Berlin (Germany)
V. A. Shchukin, Technische Univ. Berlin (Germany)
T. Kettler, Technische Univ. Berlin (Germany)
K. Posilovic, Technische Univ. Berlin (Germany)
N. N. Ledentsov, Technische Univ. Berlin (Germany)
D. Bimberg, Technische Univ. Berlin (Germany)
R. Duboc, PBC Lasers Ltd. (Israel)
A. Sharon, PBC Lasers Ltd. (Israel)
D. B. Arbiv, PBC Lasers Ltd. (Israel)
U. Ben-Ami, PBC Lasers Ltd. (Israel)


Published in SPIE Proceedings Vol. 6889:
Physics and Simulation of Optoelectronic Devices XVI
Marek Osinski; Fritz Henneberger; Keiichi Edamatsu, Editor(s)

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