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Proceedings Paper

Recent developments of InP-based quantum dashes for directly modulated lasers and semiconductor optical amplifiers
Author(s): F. Lelarge; R. Brenot; B. Rousseau; F. Martin; G. Patriarche; F. Poingt; L. LeGouezigou; O. Le Gouezigou; C. Dernazaretian; E. Derouin; O. Drisse; F. Pommereau; A. Accard; M. Caligaro; D. Make; J.-G. Provost; P. Resneau; B. Dagens; F. van-Dijk; M. Krakowski; G. H. Duan
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Paper Abstract

We report on the recent advances in InP-based Quantum Dashes (Qdashes) material for 1.55μm optoelectronic devices. We achieve highly uniform, reproducible and wavelength-controlled Qdashes, with a length ranging from 50nm to 500nm depending on the growth conditions. These Qdashes lead either to high modal gain distributed feedback (DFB) lasers or low chirp semiconductor optical amplifier (SOA). Moreover, we demonstrate that Qdashes are compatible with buried ridge stripe and shallow ridge technology and lead to very reliable lasers. Directly modulated lasers with 10GHz bandwidth are demonstrated in continuous wave mode operation. 10Gb/s transmission over 25km in semi-cooled operation is achieved using DFB buried lasers. Qdashes optimization leads to SOA with internal gain of 10 dB and a -3dB optical bandwidth of 120 nm at 50°C, paving the way for semi-cooled CWDM optical sources. Furthermore, low chirp Qdashes SOA are evaluated as optical boosters after a modulated source. Although we still observe overshoots on the amplified signal, the chirp, even in their saturation regime, is low enough to allow for 50 km of transmission at 10Gb/s.

Paper Details

Date Published: 22 February 2008
PDF: 20 pages
Proc. SPIE 6889, Physics and Simulation of Optoelectronic Devices XVI, 68890L (22 February 2008); doi: 10.1117/12.784380
Show Author Affiliations
F. Lelarge, Alcatel-Thales III-V Lab. (France)
R. Brenot, Alcatel-Thales III-V Lab. (France)
B. Rousseau, Alcatel-Thales III-V Lab. (France)
F. Martin, Alcatel-Thales III-V Lab. (France)
G. Patriarche, Lab. for Photonics and Nanostructures (France)
F. Poingt, Alcatel-Thales III-V Lab. (France)
L. LeGouezigou, Alcatel-Thales III-V Lab. (France)
O. Le Gouezigou, Alcatel-Thales III-V Lab. (France)
C. Dernazaretian, Alcatel-Thales III-V Lab. (France)
E. Derouin, Alcatel-Thales III-V Lab. (France)
O. Drisse, Alcatel-Thales III-V Lab. (France)
F. Pommereau, Alcatel-Thales III-V Lab. (France)
A. Accard, Alcatel-Thales III-V Lab. (France)
M. Caligaro, Alcatel-Thales III-V Lab. (France)
D. Make, Alcatel-Thales III-V Lab. (France)
J.-G. Provost, Alcatel-Thales III-V Lab. (France)
P. Resneau, Alcatel-Thales III-V Lab. (France)
B. Dagens, Alcatel-Thales III-V Lab. (France)
F. van-Dijk, Alcatel-Thales III-V Lab. (France)
M. Krakowski, Alcatel-Thales III-V Lab. (France)
G. H. Duan, Alcatel-Thales III-V Lab. (France)


Published in SPIE Proceedings Vol. 6889:
Physics and Simulation of Optoelectronic Devices XVI
Marek Osinski; Fritz Henneberger; Keiichi Edamatsu, Editor(s)

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