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Proceedings Paper

Semiconductor laser subject to intense feedback with variably rotated polarization
Author(s): Noam Gross; Zav Shotan; Tal Galfsky; Lev Khaykovich
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Paper Abstract

A semiconductor laser subject to delayed optical feedback is investigated in the limit of intense feedback power. Back-injection of light with variably rotated polarization reveals a symmetry breaking in laser emission spectra and output power when the rotation angle is changed in the vicinity of the orthogonal orientation. To explain the observed asymmetry we propose a simple geometric model which includes the relative contributions of both TE and TM lasing modes into the feedback light. In a range of feedback polarization rotation angles the emission spectra of the laser reveal a gap with width of more than a terahertz. The position of the gap and its width are shown to be regulated by means of feedback polarization rotation angle. We demonstrate that a theoretical approach, based on carrier density grating induced potential, explains our experimental results.

Paper Details

Date Published: 22 February 2008
PDF: 12 pages
Proc. SPIE 6889, Physics and Simulation of Optoelectronic Devices XVI, 68890A (22 February 2008); doi: 10.1117/12.784328
Show Author Affiliations
Noam Gross, Bar-Ilan Univ. (Israel)
Zav Shotan, Bar-Ilan Univ. (Israel)
Tal Galfsky, Bar-Ilan Univ. (Israel)
Lev Khaykovich, Bar-Ilan Univ. (Israel)


Published in SPIE Proceedings Vol. 6889:
Physics and Simulation of Optoelectronic Devices XVI
Marek Osinski; Fritz Henneberger; Keiichi Edamatsu, Editor(s)

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