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Proceedings Paper

Strain-compensated AlAs-InGaAs quantum-cascade lasers with emission wavelength 3-5 µm
Author(s): W. Ted Masselink; Mykhaylo P. Semtsiv; Martin Wienold; Mikaela Chashnikova; Ismail Bayrakli; Matthias Klinkmüller
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Paper Abstract

A design strategy for short wavelength (equation) quantum-cascade lasers (QCLs) on InP substrates is discussed and the performance of these lasers evaluated. The QCLs are based on strain-compensated AlAs-In0.73Ga0.27As heterostructures grown using gas-source molecular-beam epitaxy on InP substrates. Both composite barriers based on AlAs-In0.55Al0.45As and composite wells based on In0.73Ga0.27As-In0.55Al0.45As are used to achieve laser emission at wavelengths as short as 3.05 μm by avoiding leakage from the upper laser state into either the higher-lying miniband or into indirect states within the heterostructure.

Paper Details

Date Published: 7 February 2008
PDF: 11 pages
Proc. SPIE 6889, Physics and Simulation of Optoelectronic Devices XVI, 688913 (7 February 2008); doi: 10.1117/12.784324
Show Author Affiliations
W. Ted Masselink, Humboldt-Univ. zu Berlin (Germany)
Mykhaylo P. Semtsiv, Humboldt-Univ. zu Berlin (Germany)
Martin Wienold, Humboldt-Univ. zu Berlin (Germany)
Mikaela Chashnikova, Humboldt-Univ. zu Berlin (Germany)
Ismail Bayrakli, Humboldt-Univ. zu Berlin (Germany)
Matthias Klinkmüller, Humboldt-Univ. zu Berlin (Germany)


Published in SPIE Proceedings Vol. 6889:
Physics and Simulation of Optoelectronic Devices XVI
Marek Osinski; Fritz Henneberger; Keiichi Edamatsu, Editor(s)

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