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Proceedings Paper

Highly unidirectional Y-junction S-section ring lasers
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Paper Abstract

Semiconductor ring lasers show great promise for rotation sensing through the Sagnac effect of frequency shifting. Ensuring a controlled unidirectional operation of ring lasers can greatly benefit this application. An S-section racetrack design for semiconductor ring lasers was previously developed with the goal of favoring the waves traveling in a preselected direction and suppressing the counterpropagating waves. However, that design turned out to be not as effective as expected, with bistable behavior and directional switching over a wide range of pumping currents. We report on design, fabrication and characterization of Y-junction S-section InAs/InGaAs/GaAs/AlGaAs quantum dot ring lasers with improved unidirectionality. The new design suppresses the unwanted counterpropagating waves more effectively than it was possible in the previous S-section-racetrack design.

Paper Details

Date Published: 29 February 2008
PDF: 7 pages
Proc. SPIE 6889, Physics and Simulation of Optoelectronic Devices XVI, 688916 (29 February 2008); doi: 10.1117/12.784186
Show Author Affiliations
Nathan J. Withers, Ctr. for High Technology Materials, The Univ. of New Mexico (United States)
Omar K. Qassim, Ctr. for High Technology Materials, The Univ. of New Mexico (United States)
Gennady A. Smolyakov, Ctr. for High Technology Materials, The Univ. of New Mexico (United States)
Marek Osiński, Ctr. for High Technology Materials, The Univ. of New Mexico (United States)


Published in SPIE Proceedings Vol. 6889:
Physics and Simulation of Optoelectronic Devices XVI
Marek Osinski; Fritz Henneberger; Keiichi Edamatsu, Editor(s)

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