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Proceedings Paper

Monolithic InP-based passively modelocked semiconductor ring lasers at 1.5 μm
Author(s): Erwin Bente; Martijn Heck; Yohan Barbarin; Sanguan Anantathanasarn; Richard Nötzel; Meint Smit
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Paper Abstract

In this paper an overview is given of the results we have obtained at the COBRA Research Institute in our work on passively modelocked semiconductor lasers operating in the 1.5 μm wavelength region. Most results concern modelocked ring lasers that are realized monolithically in the InP/InGaAsP materials system as well as simulations using lumped element and traveling wave type models. The experimental results show that the ring lasers appear as the more stable type of lasers. The modeling results show the importance of using a symmetrical configuration in the ring laser for stable operation. Most recent results on linear modelocked quantum dot lasers at 1.5 μm indicate the improvements possible using these materials.

Paper Details

Date Published: 22 February 2008
PDF: 10 pages
Proc. SPIE 6889, Physics and Simulation of Optoelectronic Devices XVI, 688915 (22 February 2008); doi: 10.1117/12.784181
Show Author Affiliations
Erwin Bente, Technische Univ. Eindhoven (Netherlands)
Martijn Heck, Technische Univ. Eindhoven (Netherlands)
Yohan Barbarin, Technische Univ. Eindhoven (Netherlands)
Sanguan Anantathanasarn, Technische Univ. Eindhoven (Netherlands)
Richard Nötzel, Technische Univ. Eindhoven (Netherlands)
Meint Smit, Technische Univ. Eindhoven (Netherlands)

Published in SPIE Proceedings Vol. 6889:
Physics and Simulation of Optoelectronic Devices XVI
Marek Osinski; Fritz Henneberger; Keiichi Edamatsu, Editor(s)

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