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Proceedings Paper

Thick InGaN growth on several crystal planes of ZnO substrate by metalorganic vapor phase epitaxy
Author(s): Y. Kawai; S. Ohsuka; M. Iwaya; S. Kamiyama; H. Amano; I. Akasaki
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Paper Abstract

InGaN epitaxial film growth has been performed on (0001) c-, (1120) a- and (1100) (see manuscript for full text) m-plane ZnO substrates by metalorganic vapor phase epitaxy in the temperature range of 550°C - 680°C. The grown layers were confirmed to be single crystalline by X-ray diffraction.

Paper Details

Date Published: 22 February 2008
PDF: 9 pages
Proc. SPIE 6889, Physics and Simulation of Optoelectronic Devices XVI, 688904 (22 February 2008); doi: 10.1117/12.784113
Show Author Affiliations
Y. Kawai, Meijo Univ. (Japan)
S. Ohsuka, Meijo Univ. (Japan)
M. Iwaya, Meijo Univ. (Japan)
S. Kamiyama, Meijo Univ. (Japan)
H. Amano, Meijo Univ. (Japan)
I. Akasaki, Meijo Univ. (Japan)


Published in SPIE Proceedings Vol. 6889:
Physics and Simulation of Optoelectronic Devices XVI
Marek Osinski; Fritz Henneberger; Keiichi Edamatsu, Editor(s)

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