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Proceedings Paper

Femtosecond x-ray diffuse scattering measurements of semiconductor ablation dynamics
Author(s): A. M. Lindenberg; S. Engemann; K. J. Gaffney; K. Sokolowski-Tinten; J. Larsson; D. Reis; P. Lorazo; J. B. Hastings
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Paper Abstract

Femtosecond time-resolved small and wide-angle x-ray diffuse scattering techniques are applied to investigate the ultrafast nucleation processes that occur during the ablation process in semiconducting materials. Following intense optical excitation, a transient liquid state of high compressibility characterized by large-amplitude density fluctuations is observed and the build-up of these fluctuations is measured in real-time. Small-angle scattering measurements reveal the first steps in the nucleation of nanoscale voids below the surface of the semiconductor and support MD simulations of the ablation process.

Paper Details

Date Published: 12 May 2008
PDF: 8 pages
Proc. SPIE 7005, High-Power Laser Ablation VII, 700504 (12 May 2008); doi: 10.1117/12.784094
Show Author Affiliations
A. M. Lindenberg, Stanford Linear Accelerator Ctr. (United States)
Stanford Univ. (United States)
S. Engemann, Stanford Linear Accelerator Ctr. (United States)
K. J. Gaffney, Stanford Linear Accelerator Ctr. (United States)
K. Sokolowski-Tinten, Univ. Duisburg-Essen (Germany)
J. Larsson, Lund Institute of Technology (Sweden)
D. Reis, Univ. of Michigan (United States)
P. Lorazo, Ecole Polytechnique de Montreal (Canada)
J. B. Hastings, Stanford Linear Accelerator Ctr. (United States)

Published in SPIE Proceedings Vol. 7005:
High-Power Laser Ablation VII
Claude R. Phipps, Editor(s)

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