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Proceedings Paper

Total ionizing dose effects on the IGBT performance for a DC-DC converter
Author(s): Young Hwan Lho; Sang Yong Lee; Phil-Hyun Kang
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Paper Abstract

IGBT in power system has been dominating MOS (Metal Oxide Semiconductor) transistor since IGBTs (Insulated Gate Bipolar Transistor) guarantee better conduction loss and large current capacity. The radiation induced characteristics of IGBT are mainly emphasized the threshold shifting due to the oxide charge trapping in MOS and the reduction of current gain in the bipolar transistor being inherently composed in the IGBT structure. A lot of analysis on IGBT irradiation has been carried out by researchers. The IGBT in the converter plays an important role in switching. In this paper, the IGBT macro-model for the DC/DC converter is implemented and analyzed the electrical characteristics by SPICE simulation model. In addition, the design SPICE parameters of BF (forward beta), KP (MOS trans-conductance), and VT (threshold voltage) by γ radiation effects are evaluated.

Paper Details

Date Published: 9 January 2008
PDF: 6 pages
Proc. SPIE 6794, ICMIT 2007: Mechatronics, MEMS, and Smart Materials, 679438 (9 January 2008); doi: 10.1117/12.783855
Show Author Affiliations
Young Hwan Lho, Woosong Univ. (South Korea)
Sang Yong Lee, Kodensi Korea Corp. (South Korea)
Phil-Hyun Kang, Korea Atomic Energy Research Institute (South Korea)


Published in SPIE Proceedings Vol. 6794:
ICMIT 2007: Mechatronics, MEMS, and Smart Materials
Minoru Sasaki; Gisang Choi Sang; Zushu Li; Ryojun Ikeura; Hyungki Kim; Fangzheng Xue, Editor(s)

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