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Proceedings Paper

Hardness of CNx films deposited by MCECR plasma sputtering
Author(s): Changlong Cai; Junpeng Li; Qian Mi; Weihong Ma; Yixin Yan; Haifeng Liang
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Paper Abstract

The CNx (carbon nitride) films were deposited on silicon (100) with Mirror-Confinement-type Electron Cyclotron Resonance (MCECR) plasma sputtering method, which sputters pure carbon target with the Ar/N2 plasma. The thickness of CNx films was about 80nm. In this paper, the hardness of CNx films was investigated, and it is measured by the nanoindenter. The technical parameters of MCECR plasma sputtering influencing the hardness of CNx films include the substrate bias, microwave power, target voltage, gas pressure, and the Ar/N2 ratio. Results shown that, the hardness of CNx films is bigger, when the substrate bias is at +30V, the microwave power is 200W, the target voltage is +500V, the gas pressure is 2×10-2Pa, and the Ar/N2 ratio is 9/1.

Paper Details

Date Published: 14 November 2007
PDF: 5 pages
Proc. SPIE 6722, 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 67224C (14 November 2007); doi: 10.1117/12.783668
Show Author Affiliations
Changlong Cai, Xi'an Technological Univ. (China)
Junpeng Li, Xi'an Technological Univ. (China)
Qian Mi, Xi'an Technological Univ. (China)
Weihong Ma, Xi'an Technological Univ. (China)
Yixin Yan, Xi'an Technological Univ. (China)
Haifeng Liang, Xi'an Technological Univ. (China)


Published in SPIE Proceedings Vol. 6722:
3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies
Li Yang; Yaolong Chen; Ernst-Bernhard Kley; Rongbin Li, Editor(s)

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