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Proceedings Paper

Low doping white phosphorescent organic light-emitting diodes
Author(s): Yadong Jiang; Jun Wang; Shuangling Lou; Hui Lin; Junsheng Yu
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Paper Abstract

Efficient white organic light-emitting diodes (OLEDs) based on a novel phosphorescent material (t-bt)2Ir(acac) with a structure ITO/CuPc (15 nm)/NPB (15 nm)/CBP : (t-bt)2Ir(acac) (30 nm, x%)/ BCP (20 nm)/Alq (20 nm)/LiF (1 nm)/Al (100 nm) were fabricated. (t-bt)2Ir(acac) lightly doped in a host material CBP was used as a yellow emitting layer and fluorescent material NPB was used as a blue emitting layer as well as a conventional hole transporting material. Low doping concentration (1%) device showing white light emission from 6 V to 14 V has a maximum efficiency 1.6 lm/W at 8 V and a maximum luminance of 4360 cd/m2 at 13 V. High doping concentration (2% and 5%) devices emit strong yellow light under low bias and change to white light emission above 10 V bias although they show higher efficiency and luminance than 1% doping concentration device.

Paper Details

Date Published: 14 November 2007
PDF: 5 pages
Proc. SPIE 6722, 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 67223Z (14 November 2007); doi: 10.1117/12.783572
Show Author Affiliations
Yadong Jiang, Univ. of Electronic Science and Technology of China (China)
Jun Wang, Univ. of Electronic Science and Technology of China (China)
Shuangling Lou, Univ. of Electronic Science and Technology of China (China)
Hui Lin, Univ. of Electronic Science and Technology of China (China)
Junsheng Yu, Univ. of Electronic Science and Technology of China (China)


Published in SPIE Proceedings Vol. 6722:
3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies

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