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Proceedings Paper

Study on chemical mechanical polishing process of lithium niobate
Author(s): Shengli Wang; Yuling Liu; Zhenxia Li
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Paper Abstract

Chemical mechanical polishing of lithium niobate wafer in alkaline slurries has been investigated. In the lithium niobate CMP, the slurry was made by adding colloidal silica abrasive to de-ionized water. The effects of polishing plate speed, slurry flow rate, polishing pressure on removal rate in actual CMP process has been discussed in order to determine the optimum conditions for those parameters. The optimal slurry component is colloid SiO2, concentration SiO2:DW=1:1; KOH concentration 0.5~1.5% and surfactant 5~15ml/L. The process conditions are polishing plate speed 60rpm, polishing pressure 140KPa and slurry flow rate 120ml/min. The removal rate can reach 300nm/min and surface roughness is 0.21nm.

Paper Details

Date Published: 14 November 2007
PDF: 4 pages
Proc. SPIE 6722, 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 67223L (14 November 2007); doi: 10.1117/12.783529
Show Author Affiliations
Shengli Wang, Hebei Univ. of Technology (China)
Yuling Liu, Hebei Univ. of Technology (China)
Zhenxia Li, Hebei Univ. of Technology (China)


Published in SPIE Proceedings Vol. 6722:
3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies

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