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Proceedings Paper

Influence of ambient gas on the microstructural properties of Er-doped nanocrystalline Si film fabricated by pulsed laser ablation
Author(s): Yang Zhou; Lizhi Chu; Pingguang Duan; Wei Xu; Yinglong Wang; Guangsheng F
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Paper Abstract

Er-doped nanocrystalline Si thin films were fabricated by pulsed laser ablation in high-purity Ar gas with different gas pressures at room temperature and post-annealing technology under different temperature in nitrogen. Scanning electron microscopy(SEM), x-ray diffraction(XRD) and Raman were employed to picture the microstructure of films. The SEM photographs showed that the morphology of film was transformed from the uniform nanoparticles in size to the web-like structure with the increase of gas pressure, which was attributed to the different collision cooling process of ablated particles. Raman and XRD spectra showed that the introduction of Ar gas could effectively improve the crystallinity degree of the samples and Si nanoparticle size could be controlled by adjusting the post-annealing temperature which was critical for improving the luminescent intensity of Er3+ ion. More uniform and higher crystallinity degree Er-doped Si thin films could be obtained at lower annealing temperature.

Paper Details

Date Published: 14 November 2007
PDF: 5 pages
Proc. SPIE 6722, 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 672237 (14 November 2007); doi: 10.1117/12.783391
Show Author Affiliations
Yang Zhou, Hebei Univ. (China)
Lizhi Chu, Hebei Univ. (China)
Pingguang Duan, Hebei Univ. (China)
Wei Xu, Hebei Univ. (China)
Yinglong Wang, Hebei Univ. (China)
Guangsheng F, Hebei Univ. (China)


Published in SPIE Proceedings Vol. 6722:
3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies

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