Share Email Print
cover

Proceedings Paper

Characterization of hydrogenated amorphous silicon thin films prepared by PECVD
Author(s): Zhi-Ming Wu; Shi-Bin Li; Wei Li; Nai-Man Niao; Ya-Dong Jiang; Kui-Peng Zhu
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Amorphous silicon (a-Si:H) films are prepared on K9 glass substrate by plasma enhanced chemical vapor deposition (PECVD) and the substrate temperature varies from 150 to 300 °C. The gas phase processes of pure SiH4 in PECVD system were discussed. The change of grain size and morphology was characterized by atomic force microscope morphology (AFM). The influence of substrate temperature on the growth rate and the optical band gap of Si:H film were measured by spectra ellipsometer (SE). Scanning electron microscopy (SEM) was used to make sure the measurement of film thickness by SE.

Paper Details

Date Published: 14 November 2007
PDF: 5 pages
Proc. SPIE 6722, 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 67222X (14 November 2007); doi: 10.1117/12.783345
Show Author Affiliations
Zhi-Ming Wu, Univ. of Electronic Science and Technology of China (China)
Shi-Bin Li, Univ. of Electronic Science and Technology of China (China)
Wei Li, Univ. of Electronic Science and Technology of China (China)
Nai-Man Niao, Univ. of Electronic Science and Technology of China (China)
Ya-Dong Jiang, Univ. of Electronic Science and Technology of China (China)
Kui-Peng Zhu, Univ. of Electronic Science and Technology of China (China)


Published in SPIE Proceedings Vol. 6722:
3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies

© SPIE. Terms of Use
Back to Top