Share Email Print

Proceedings Paper

Microstructured photonic crystal for single-mode long wavelength VCSELs
Author(s): Renaud Stevens; Philippe Gilet; Alexandre Larrue; Laurent Grenouillet; Nicolas Olivier; Philippe Grosse; Karen Gilbert; Bertrand Hladys; Badhise Ben Bakir; Jesper Berggren; Mattias Hammar; Alexei Chelnokov
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

In this article, we report on long wavelength (1.27 μm) single-mode micro-structured photonic crystal strained InGaAs quantum wells VCSELs for optical interconnection applications. Single fundamental mode room-temperature continuous-wave lasing operation was demonstrated for devices designed and processed with different two-dimensional etched patterns. The conventional epitaxial structure was grown by Metal-Organic Vapor Phase Epitaxy (MOVPE) and contains fully doped GaAs/AlGaAs DBRs, one oxidation layer and three strained InGaAs quantum wells. The holes were etched half-way through the top-mirror following various designs (triangular and square lattices) and with varying hole's diameters and pitches. We obtained up to 1.7 mW optical output power and more than 30 dB Side-Mode Suppression Ratio (SMSR) at room temperature and in continuous wave operation. Systematic static electrical, optical and spectral characterization was performed on wafer using an automated probe station. Numerical modeling using the MIT Photonic-Bands (MPB [1]) package of the transverse modal behaviors in the photonic crystal was performed using the plane wave method in order to understand the index-guiding effects of the chosen patterns, and to further optimize the design structures for mode selection at the given wavelength.

Paper Details

Date Published: 19 May 2008
PDF: 11 pages
Proc. SPIE 6997, Semiconductor Lasers and Laser Dynamics III, 69970X (19 May 2008); doi: 10.1117/12.783317
Show Author Affiliations
Renaud Stevens, CEA-LETI, MINATEC (France)
Philippe Gilet, CEA-LETI, MINATEC (France)
Alexandre Larrue, CEA-LETI, MINATEC (France)
Laurent Grenouillet, CEA-LETI, MINATEC (France)
Nicolas Olivier, CEA-LETI, MINATEC (France)
Philippe Grosse, CEA-LETI, MINATEC (France)
Karen Gilbert, CEA-LETI, MINATEC (France)
Bertrand Hladys, CEA-LETI, MINATEC (France)
Badhise Ben Bakir, CEA-LETI, MINATEC (France)
Jesper Berggren, Royal Institute of Technology (Sweden)
Mattias Hammar, Royal Institute of Technology (Sweden)
Alexei Chelnokov, CEA-LETI, MINATEC (France)

Published in SPIE Proceedings Vol. 6997:
Semiconductor Lasers and Laser Dynamics III
Krassimir P. Panajotov; Marc Sciamanna; Angel A. Valle; Rainer Michalzik, Editor(s)

© SPIE. Terms of Use
Back to Top