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Proceedings Paper

A self-biased extremely shallow quantum-well SESAM with a low saturation fluence
Author(s): E. A. Avrutin; B. S. Ryvkin; K. Panajotov
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Paper Abstract

A Semiconductor Saturable Absorber Mirror utilising the electroabsorption effect in a self-biased stack of extremely shallow quantum wells or in a bulk semiconductor is proposed and analysed theoretically and numerically. The saturation flux and recovery time of the proposed device when operated with picosecond incident pulses are shown to compare very favourably with existing all-optical constructions.

Paper Details

Date Published: 8 May 2008
PDF: 7 pages
Proc. SPIE 6997, Semiconductor Lasers and Laser Dynamics III, 69970U (8 May 2008); doi: 10.1117/12.783282
Show Author Affiliations
E. A. Avrutin, Univ. of York (United Kingdom)
B. S. Ryvkin, A.F. Ioffe Physico-Technical Institute (Russia)
Vrije Univ. Brussel (Belgium)
K. Panajotov, Vrije Univ. Brussel (Belgium)
Institute of Solid State Physics (Bulgaria)


Published in SPIE Proceedings Vol. 6997:
Semiconductor Lasers and Laser Dynamics III
Krassimir P. Panajotov; Marc Sciamanna; Angel A. Valle; Rainer Michalzik, Editor(s)

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