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Proceedings Paper

Fabrication of ZnO thin film Schottky ultraviolet photodetector
Author(s): Bo Huang; Guan-nan He; Yue-bo Wu; Liang-tang Zhang; Jing Li; Dong-hui Guo; Sun-tao Wu
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Paper Abstract

ZnO films, with C-axis preferred orientation, were deposited on SiO2/n- Si by radio frequency (RF) magnetron sputtering. The interdigital metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors were fabricated by using Ag as Schottky contact metal. For comparison, ZnO Schottky diodes were also fabricated by using Ag-ZnO-Al structures. Aluminum was used to form Ohmic contacts. Current voltage (I-V) characteristics of these devices have been analyzed. The Schottky diodes exhibit distinct rectifying I-V characteristics. The barrier height of the Ag/ZnO Schottky contacts is around 0.65 eV. The leakage current for MSM photodetector is less than 6 x 10-7A at a bias of 5V. The photoresponsivity of MSM photodetector is much higher in the ultraviolet range than in the visible range. The UV/visible (350nm/500nm) rejection ratio is more than one order of magnitude. The photoresponsivity of MSM detector exhibits a maximum value around 370 nm.

Paper Details

Date Published: 14 November 2007
PDF: 5 pages
Proc. SPIE 6722, 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 67221W (14 November 2007); doi: 10.1117/12.783033
Show Author Affiliations
Bo Huang, Xiamen Univ. (China)
Guan-nan He, Xiamen Univ. (China)
Yue-bo Wu, Xiamen Univ. (China)
Liang-tang Zhang, Xiamen Univ. (China)
Jing Li, Xiamen Univ. (China)
Dong-hui Guo, Xiamen Univ. (China)
Sun-tao Wu, Xiamen Univ. (China)


Published in SPIE Proceedings Vol. 6722:
3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies

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