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Proceedings Paper

Effect of technical parameter on optical constants of amorphous silicon thin film
Author(s): Shi-Bin Li; Zhi-Ming Wu; Kui-Peng Zhu; Ya-Dong Jiang; Wei Li; Nai-Man Niao
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Paper Abstract

In this paper, a series of a-Si:H thin films for about 350 nanometers in thickness were deposited on K9 glass substrate by means of plasma enhanced chemical vapor deposition (PECVD) . During deposition process, there are many factors which influence the optical properties of films. The importance among them includes RF power, substrate temperature and working gas pressure. Technical parameters affect the contents of hydrogen in a-Si:H film. Hydrogen plays a critical role in enhancing the ordering of the film network in a-Si, which can increase nucleation sites and reduce crystallization temperature effectively. The optical constants (n, k) of films were obtained with Forouhi Bloomer (FB) model in spectra ellipsometer (SE) and the absorption coefficient α was deduced from α=4πk/λ.

Paper Details

Date Published: 14 November 2007
PDF: 4 pages
Proc. SPIE 6722, 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 67221U (14 November 2007); doi: 10.1117/12.783030
Show Author Affiliations
Shi-Bin Li, Univ. of Electronic Science and Technology of China (China)
Zhi-Ming Wu, Univ. of Electronic Science and Technology of China (China)
Kui-Peng Zhu, Univ. of Electronic Science and Technology of China (China)
Ya-Dong Jiang, Univ. of Electronic Science and Technology of China (China)
Wei Li, Univ. of Electronic Science and Technology of China (China)
Nai-Man Niao, Univ. of Electronic Science and Technology of China (China)


Published in SPIE Proceedings Vol. 6722:
3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies

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