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Proceedings Paper

Manufacturing and photoelectrical properties of P-doped a-Si:H thin films deposited by PECVD
Author(s): Naiman Liao; Wei Li; Yadong Jiang; Yuejun Kuang; Kangcheng Qi; Zhiming Wu; Shibin Li
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Paper Abstract

The effect of gas temperature (Tg) on surface morphology, surface roughness, photoelectrical performances of a-Si:H thin films deposited by PECVD at 250°C substrate temperature has been investigated by atomic force microscopy, spectrometric ellipsometry and semiconductor characterization system, respectively. It is found that the surface morphology and density (ρ) as well as the photoelectrical properties such as refractive index (n), dark conductivity (σ), temperature coefficient of resistance (TCR) and activation energy (Ea) remarkably depend on Tg of SiH4 fed in reaction chamber. The higher the Tg, the larger the clusters of a-Si:H thin films deposited. Also, refractive index of a-Si:H thin films increase as Tg rises and the relationship between Tg enhancement of n and the densification of the films is observed. It is indicated that σ varies by two orders of magnitude but TCR decreases by 1.6 %/°C, and Ea gradually decreases linearly from 289.0 to 138.1 meV with Tg varying from room temperature to 160°C. The results of present study suggest that Tg in PECVD chamber plays an important role in the deposition of a-Si:H thin films and directly affects the surface morphology and photoelectrical properties of films. Control of surface morphology, photoelectrical properties of a-Si:H thin films through changing Tg can be usefully applied to the manufacturing of photoelectrical devices.

Paper Details

Date Published: 14 November 2007
PDF: 6 pages
Proc. SPIE 6722, 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 672219 (14 November 2007); doi: 10.1117/12.782992
Show Author Affiliations
Naiman Liao, Univ. of Electronic Science and Technology of China (China)
Wei Li, Univ. of Electronic Science and Technology of China (China)
Yadong Jiang, Univ. of Electronic Science and Technology of China (China)
Yuejun Kuang, Univ. of Electronic Science and Technology of China (China)
Kangcheng Qi, Univ. of Electronic Science and Technology of China (China)
Zhiming Wu, Univ. of Electronic Science and Technology of China (China)
Shibin Li, Univ. of Electronic Science and Technology of China (China)


Published in SPIE Proceedings Vol. 6722:
3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies

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