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Proceedings Paper

Particle size study of diazonaphthoquinone/novolak
Author(s): Ping Linda Zhang; Hai Liang Yu; Song Hu; Zhong Yuan Jin; Le Wang; Li Yu Liu; Lu Chuan Zhang; Yong Yang
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Paper Abstract

With decreasing CD in semiconductor industry, the ability to detect smaller resist particles on wafers after photolithography process becomes increasingly important for the advanced photolithography processes. It is important to be able to detect the resist defect for the advanced photolithography processes. To be able to measure the resist, defect after development process can give the indication and the early warning of the photoresist defect on the wafer. The diazoquinone/novolak resist particles were collected after the development of several lots of wafers, while the wafer critical dimension is 2μm. The particle size and its distribution after development process were obtained. The resist particles were negatively stained before TEM. The TEM figures and the measurement data of the resist particle diameters were reported. The size measurement data of TEM figures of diazoquinone/novolak resist particles after photolithography development process was analyzed. The particle size mainly has dual separate distribution peaks: >85% of particles have the diameters distributed around ~23 nm and 15% of bigger particles around 220 nm. Because of the unique role of DNQ, which is both the photo-sensitizer and the development inhibitor before exposure, the correlation of resist particle size with respect to the developer concentration, the size of the radius of gyration, the "photosensitizing center" and the "development center" is speculated. Generally the particle size distribution is mainly correlated to the developer concentration, polymer macromolecular weight and the polymer / PAC ratio.

Paper Details

Date Published: 21 November 2007
PDF: 8 pages
Proc. SPIE 6724, 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Design, Manufacturing, and Testing of Micro- and Nano-Optical Devices and Systems, 67241S (21 November 2007); doi: 10.1117/12.782960
Show Author Affiliations
Ping Linda Zhang, Southeast Univ. (China)
Hai Liang Yu, Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd (China)
Song Hu, Institute of Optics and Electronics (China)
Zhong Yuan Jin, Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. (China)
Le Wang, Southeast Univ. (China)
Li Yu Liu, Southeast Univ. (China)
Lu Chuan Zhang, Nanjing Electronic Device Institute (China)
Yong Yang, Nanjing Electronic Device Institute (China)


Published in SPIE Proceedings Vol. 6724:
3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Design, Manufacturing, and Testing of Micro- and Nano-Optical Devices and Systems
Sen Han; Tingwen Xing; Yanqiu Li; Zheng Cui, Editor(s)

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