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Proceedings Paper

Simulation and fabrication of monolithically integrated MSM/PHEMT 850 nm optical receiver front end
Author(s): Chao Fan; Tang-Sheng Chen; Shi-Long Jiao; Lin Liu; Zhen-Long Chen; Yu-Lin Wang; Yun-Feng Wu; Yu-Tang Ye
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Paper Abstract

An 850 nm monolithically integrated optical receiver front end has been simulated by ATLAS and developed based on 0.5 μm GaAs PHEMT process, which comprises a metal-semiconductor-metal (MSM) photodetector and a distributed amplifier.The output eye diagrams for 2.5 Gb/s and 5Gb/s NRZ pseudorandom binary sequence are attained. Compared to the characteristics of actual device, this contribution details a simulation strategy for accurate prediction of the unilluminated performances of the devices.

Paper Details

Date Published: 28 November 2007
PDF: 4 pages
Proc. SPIE 6724, 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Design, Manufacturing, and Testing of Micro- and Nano-Optical Devices and Systems, 67241M (28 November 2007); doi: 10.1117/12.782902
Show Author Affiliations
Chao Fan, Univ. of Electronic Science and Technology of China (China)
National Key Lab. of Monolithic Integrated Circuits and Modules (China)
Tang-Sheng Chen, National Key Lab. of Monolithic Integrated Circuits and Modules (China)
Shi-Long Jiao, Univ. of Electronic Science and Technology of China (China)
National Key Lab. of Monolithic Integrated Circuits and Modules (China)
Lin Liu, Univ. of Electronic Science and Technology of China (China)
Zhen-Long Chen, Univ. of Electronic Science and Technology of China (China)
Yu-Lin Wang, Univ. of Electronic Science and Technology of China (China)
Yun-Feng Wu, Univ. of Electronic Science and Technology of China (China)
Yu-Tang Ye, Univ. of Electronic Science and Technology of China (China)


Published in SPIE Proceedings Vol. 6724:
3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Design, Manufacturing, and Testing of Micro- and Nano-Optical Devices and Systems
Sen Han; Tingwen Xing; Yanqiu Li; Zheng Cui, Editor(s)

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