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Proceedings Paper

Recent advances in LWIR Type – II InAs/GaSb superlattice photodetectors and focal plane arrays at the Center for Quantum Devices
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Paper Abstract

In recent years, Type-II InAs/GaSb superlattice photo-detectors have experienced significant improvements in material quality, structural designs, and imaging applications. They now appear to be a possible alternative to the state-of-the-art HgCdTe (MCT) technology in the long and very long wavelength infrared regimes. At the Center for Quantum Devices, we have successfully realized very high quantum efficiency, very high dynamic differential resistance R0A product LWIR Type-II InAs/GaSb superlattice photodiodes with efficient surface passivation techniques. The demonstration of high quality LWIR Focal Plane Arrays that were 100% fabricated in-house reaffirms the pioneer position of this university-based laboratory.

Paper Details

Date Published: 2 May 2008
PDF: 12 pages
Proc. SPIE 6940, Infrared Technology and Applications XXXIV, 694009 (2 May 2008); doi: 10.1117/12.782854
Show Author Affiliations
Manijeh Razeghi, Center for Quantum Devices (United States)
Darin Hoffman, Center for Quantum Devices (United States)
Binh-Minh Nguyen, Center for Quantum Devices (United States)
Pierre-Yves Delaunay, Center for Quantum Devices (United States)
Edward Kwei-wei Huang, Center for Quantum Devices (United States)
Meimei Z. Tidrow, Missile Defense Agency (United States)

Published in SPIE Proceedings Vol. 6940:
Infrared Technology and Applications XXXIV
Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Editor(s)

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