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Proceedings Paper

Study on the electrical and optical characteristics of a silicon electro-optic waveguide modulator using MOS configuration
Author(s): Huilin Zhang; Xianzhong Jian; Bin Zhou
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Paper Abstract

Active (or tunable) waveguide devices are essential elements to control light for information processing (e.g., coding-decoding, routing, multiplexing, timing, logic operations, etc.) in high-density integrated-optic circuits. In these devices, the complex effective refractive index of the structure is varied in order to produce a phase or intensity modulation. In this paper we study a micron-size metal-oxide-semiconductor (MOS)-based high index-contrast SOI waveguide for highspeed electro-optic modulation on strong light confinement. The light confinement enhances the effect of small index changes on the transmission of the device, enabling an ultracompact structure with high modulation depth. We study the electrical and optical characteristics of this type of silicon electro-optic waveguide modulator using a MOS configuration, and calculate the device's performance for electro-optic modulation with high frequency under different modes of operation of the MOS diode and gate oxide thickness. The studied core Si electro-optic modulation device with high frequency will bring big improvement in the field of optic communication and optic calculation.

Paper Details

Date Published: 21 November 2007
PDF: 5 pages
Proc. SPIE 6724, 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Design, Manufacturing, and Testing of Micro- and Nano-Optical Devices and Systems, 67241C (21 November 2007); doi: 10.1117/12.782848
Show Author Affiliations
Huilin Zhang, Univ. of Shanghai for Science and Technology (China)
Tongji Univ. (China)
Xianzhong Jian, Univ. of Shanghai for Science and Technology (China)
Bin Zhou, Tongji Univ. (China)


Published in SPIE Proceedings Vol. 6724:
3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Design, Manufacturing, and Testing of Micro- and Nano-Optical Devices and Systems
Sen Han; Tingwen Xing; Yanqiu Li; Zheng Cui, Editor(s)

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