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Proceedings Paper

Ferroelectric properties of multi-layer LiTaO3 thin films with Ta2O5 buffer
Author(s): De-Yin Zhang; Wei-Dong Peng; Jin-Hua Li; Kun Li; Da-Gui Huang
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Paper Abstract

The new sol-gel derived multi-layer LiTaO3 thin films with Ta2O5 buffer layer were prepared on Pt/Ti/SiO2/Si substrate using lithium ethoxide and tantalum ethoxide as starting materials. The sol of Ta2O5 was firstly covered on the substrate by spin coating at 6500rpm for 50s and then a rapid annealing at 650°C for 2min to form an about 20nm thick Ta2O5 buffer layer. Multi-layer LiTaO3 thin films were made over Ta2O5 buffer by repeated spin coating at 4000rpm for 30s and then a rapid annealing process at 700°C for 3min. The spectrum of XRD show the crystalline orientation of thin film type Ta2O5 is different compared to powder type Ta2O5. The SEM micrograph of the cross section shows the prepared sample is uniform, smooth and crack-free on the surface and the thickness of LiTaO3 thin film is 0.341μm. The ferroelectric hysteresis loop and leakage current of the prepared sample have been measured using Al/LiTaO3/Ta2O5/Pt structure electrode by a ferroelectric material analyzer PLC-100. The remanent polarization and coercive field of the prepared sample polarized at 13V were 3.4μC/cm2 and 185kV/cm respectively. The leakage current of the prepared sample was 2.66x10-7A at 71.43kV/cm .Experimental results show the prepared sample of LiTaO3 thin film with Ta2O5 buffer has good ferroelectric properties. Ta2O5 buffer introduction between LiTaO3 thin film and Pt substrate can effectively decrease the leakage current and improve the properties of uncooled LiTaO3 infrared device.

Paper Details

Date Published: 14 November 2007
PDF: 5 pages
Proc. SPIE 6722, 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 67220G (14 November 2007); doi: 10.1117/12.782838
Show Author Affiliations
De-Yin Zhang, Civil Aviation Flight Univ. of China (China)
Wei-Dong Peng, Civil Aviation Flight Univ. of China (China)
Jin-Hua Li, Jiangsu Polytechnic Univ. (China)
Kun Li, Jiangsu Polytechnic Univ. (China)
Da-Gui Huang, Univ. of Electronic Science and Technology (China)


Published in SPIE Proceedings Vol. 6722:
3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies

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