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Proceedings Paper

Ultrafast dynamic ellipsometry of laser ablated silicon
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Paper Abstract

Ultrafast dynamic ellipsometry, a technique that probes a sample with chirped laser pulses at two angles and with two orthogonal polarizations, was used to measure the effective refractive index across the ablation region of a Si(111) wafer exposed to a 100 fs ablation pulse. The resulting refractive index data show a significant increase in the extinction coefficient, indicative of the melting of silicon.

Paper Details

Date Published: 12 May 2008
PDF: 8 pages
Proc. SPIE 7005, High-Power Laser Ablation VII, 70050M (12 May 2008); doi: 10.1117/12.782739
Show Author Affiliations
C. A. Bolme, Massachusetts Institute of Technology (United States)
S. D. McGrane, Los Alamos National Lab. (United States)
D. S. Moore, Los Alamos National Lab. (United States)
D. J. Funk, Los Alamos National Lab. (United States)


Published in SPIE Proceedings Vol. 7005:
High-Power Laser Ablation VII
Claude R. Phipps, Editor(s)

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