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Proceedings Paper

FPA development: from InGaAs, InSb, to HgCdTe
Author(s): Henry Yuan; Gary Apgar; Jongwoo Kim; Joyce Laquindanum; Varsha Nalavade; Paul Beer; Joe Kimchi; Ted Wong
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Paper Abstract

This paper reports preliminary results obtained on 1.7µm InGaAs, Vis-InGaAs, extended-wavelength InGaAs, InSb, and HgCdTe 320x256 FPAs fabricated at Judson. Test structures designed to characterize fundamental detector parameters are presented. FPA performance and imaging analysis are reported. Possible performance improvements by means of architectural design and fabrication process refinement are described. Future development plan and preliminary experimental results on FPAs with larger format and smaller pitch are also discussed. Relatively low dark current and NEI values, as well as high operability, are achieved for 1.7µm InGaAs FPAs at room temperature. High quantum efficiency in the visible wavelength range is achieved for Vis-InGaAs FPAs. Low NETD values are achieved for InSb FPAs at LN2 and MWIR HgCdTe FPAs at -70°C (203°K).

Paper Details

Date Published: 1 May 2008
PDF: 11 pages
Proc. SPIE 6940, Infrared Technology and Applications XXXIV, 69403C (1 May 2008); doi: 10.1117/12.782735
Show Author Affiliations
Henry Yuan, Teledyne Judson Technologies (United States)
Gary Apgar, Teledyne Judson Technologies (United States)
Jongwoo Kim, Teledyne Judson Technologies (United States)
Joyce Laquindanum, Teledyne Judson Technologies (United States)
Varsha Nalavade, Teledyne Judson Technologies (United States)
Paul Beer, Teledyne Judson Technologies (United States)
Joe Kimchi, Teledyne Judson Technologies (United States)
Ted Wong, Teledyne Judson Technologies (United States)

Published in SPIE Proceedings Vol. 6940:
Infrared Technology and Applications XXXIV
Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Editor(s)

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