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Proceedings Paper

Impact of molybdenum/silicon multilayer structure on extreme ultraviolet mask fabrication
Author(s): Guorong Zhao; Yanqiu Li
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Paper Abstract

Electron beam lithography (EBL) will be used to pattern an Extreme Ultraviolet (EUV) mask. Both forward scattering electrons and backscattering electrons contribute to the energy deposition in resist, which is directly related to the pattern profile. When the exposure conditions, development conditions and the thickness and material of absorber, buffer, capping, and substrate are determined, the structure of molybdenum/silicon (Mo/Si) multilayer become the exclusive factor to influent the EUV mask fabrication. Several researchers have investigated the influence of the number of repeated Mo/Si layer and their thickness on the backscattering coefficient and the deposited energy in the resist. However the secondary electron generation and tracking is not implemented. Furthermore, the characters of pattern profile were not analyzed. In this paper, EBL module of in house software MicroCruiser, which included the secondary electrons and relativistic correction of high energy electron, was used to study the impact of structure of Mo/Si multilayer on the mask fabrication by EBL. Energy distribution in resist, backscattering coefficient (BSC), and the pattern profile had been investigated. The results show that with the number of Mo/Si repeated layers increases, the BSC decrease and the line edge of pattern profile is much smoother.

Paper Details

Date Published: 19 November 2007
PDF: 6 pages
Proc. SPIE 6724, 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Design, Manufacturing, and Testing of Micro- and Nano-Optical Devices and Systems, 672411 (19 November 2007); doi: 10.1117/12.782733
Show Author Affiliations
Guorong Zhao, Institute of Electrical Engineering (China)
Graduate School of the Chinese Academy of Sciences (China)
Yanqiu Li, Institute of Electrical Engineering (China)
Beijing Institute of Technology (China)


Published in SPIE Proceedings Vol. 6724:
3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Design, Manufacturing, and Testing of Micro- and Nano-Optical Devices and Systems
Sen Han; Tingwen Xing; Yanqiu Li; Zheng Cui, Editor(s)

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