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Proceedings Paper

Ratio measurement of reactive ion beam etching rate using optical interferometry
Author(s): Da-wei Zhang; Yuan-shen Huang; Zheng-ji Ni; Song-lin Zhuang
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Paper Abstract

The ratio measurement of reactive ion beam etching rate using optical interferometry was investigated. The principle is that the depth of groove could be showed by the bend of interference fringe. Using interferometric measurement, the depths of groove before and after etching were determined and marked as d1, d2. One new groove whose bottom was on the substrate was made. There are three photos before etching and after etching new grooves were got. It is found that the ratio is 10:3 under the conditions of experiment. Compared with traditional measurement, this kind of way has some advantages such as simplicity, higher measurement precision and so on.

Paper Details

Date Published: 21 November 2007
PDF: 4 pages
Proc. SPIE 6723, 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optical Test and Measurement Technology and Equipment, 67230C (21 November 2007); doi: 10.1117/12.782719
Show Author Affiliations
Da-wei Zhang, Univ. of Shanghai for Science and Technology (China)
Yuan-shen Huang, Univ. of Shanghai for Science and Technology (China)
Zheng-ji Ni, Univ. of Shanghai for Science and Technology (China)
Song-lin Zhuang, Univ. of Shanghai for Science and Technology (China)


Published in SPIE Proceedings Vol. 6723:
3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optical Test and Measurement Technology and Equipment
Junhua Pan; James C. Wyant; Hexin Wang, Editor(s)

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